 | Author | Message | | | jojolucky | | Posted: Mon May 24, 2010 8:28 am Post subject: TIP36A Datasheet | | | | Joined: 12 Apr 2008 Posts: 292 | Edited by seekic.com,the leading IC purchasers' best choice of platform for one-stop valued service!
Description:
The TIP36A is designed as complementary silicon high-power transistor for general purpose power amplifier and switching applications.
It has four features. (1)25A collector current. (2)Low leakage current which would be 1.0mA at 30 and 60V. (3)Excellent DC gain which would be 40 typ at 15A. (4)High current gain bandwidth product which would be 3.0 min at Ic=1.0A, f=1.0MHz. Those are all the main features.
Some absolute maximum ratings have been concluded into several points as follow. (1)Its collector to emitter voltage would be 60V. (2)Its collector to base voltage would be 60V. (3)Its emitter to base voltage would be 5.0Vdc. (4)Its collector current would be 25Adc for continuous and would be 40Adc for peak. (5)Its total power dissipation would be 125W and derate above 25°C would be 1.0W/°C. (6)Its operating storage junction temperature range would be from -65°C to +150°C. (7)Its unclamped inductive load would be 90mJ. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device. | |
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