| Joined: 12 Apr 2008 Posts: 299 | The SI1555DL-T1-E3 is the complementary low-threshold MOSFET pair.
ParametricsSI1555DL-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage: 20V, -8V; (2)Gate-Source Voltage: ±12V, ±8; (3)Continuous Drain Current (TJ = 150℃): TA = 25℃,± 0.70, ±0.66, -0.60, -0.57A; (4)Continuous Drain Current (TJ = 150℃), TA = 85℃: ±0.50, ±0.48, -0.43, -0.41A; (5)Pulsed Drain Current: ±1.0A; (6)Continuous Source Current (Diode Conduction): 0.25, 0.23, -0.25, -0.23A; (7)Maximum Power Dissipation, TA = 25℃: 0.30, 0.27, 0.30, 0.27W ; (8)Maximum Power Dissipation,TA = 85℃: 0.16, 0.14, 0.16, 0.14W; (9)Operating Junction and Storage Temperature Range: -55 to 150℃.
FeaturesSI1555DL-T1-E3 features: TrenchFET Power MOSFET. | |
|
|
