Integrated circuit BFU510 FEATURES

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< Analog Electronic ~ Integrated circuit BFU510 FEATURES

wisdomchina

Posted: Thu May 01, 2008 12:44 pm Post subject: Integrated circuit BFU510 FEATURES

Joined: 22 Apr 2008 Posts: 5

Integrated circuit BFU510 FEATURES
· Very high power gain
· Very low noise figure
· High transition frequency
· Emitter is thermal lead
· Low feedback capacitance
· 45 GHz SiGe process.
BFU510 APPLICATIONS
· RF front end
· Wideband applications, e.g. analog and digital cellular
telephones, cordless telephones (PHS, DECT, etc.)
· Radar detectors
· Pagers
· Satellite television tuners (SATV)
· High frequency oscillators.
BFU510 DESCRIPTION
NPN SiGe wideband transistor for low voltage applications
in a plastic, 4-pin dual-emitter SOT343R package.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VCBO collector-base voltage open emitter - - 9 V
VCEO collector-emitter voltage open base - - 2.3 V
IC collector current (DC) - 10 15 mA
Ptot total power dissipation Ts £ 115 °C - - 35 mW
hFE DC current gain IC = 10 mA; VCE = 2 V; Tj = 25 °C 70 140 210
Gmax maximum power gain IC = 10 mA; VCE = 2 V; f = 2 GHz; Tamb = 25 °C - 23 - dB
NF noise figure IC = 0.5 mA; VCE = 2 V; f = 2 GHz; GS = Gopt - 1 - dB
BFU510 PDF Download from ChinaICMart .

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