BSM200GA120DN2

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< Analog Electronic ~ BSM200GA120DN2

jojolucky

Posted: Mon Aug 30, 2010 9:21 am Post subject: BSM200GA120DN2

Joined: 12 Apr 2008 Posts: 292

The BSM200GA120DN2 is a type of IGBT power module.features of the BSM200GA120DN2 are:(1)single switch;(2)incl uding fast free-wheeling diodes;(3)package with insulated metal base plate.

The absolute maximum ratings and electrical characteristics(Tj = 25 °C) of the BSM200GA120DN2 can be summarize d as:(1):collector-emitter voltage is 1200 V;(2):collector-gate voltage is 1200V when RGE is 20 kW;(3):gate-emitter voltage is ±20V;(4) Very Happy

C collector current is 300A when TC is 25 °C,DC collector current is 200A when TC is 80 °C; (5):pulsed collector current is 600A when tp is 1 ms and TC is 25 °C,pulsed collector current is 400A when tp is 1 ms and TC is 80 °C;(6):power dissipation per IGBT is 1550W when TC is 25 °C;(7):chip temperature is+150℃;( Cool

:stor age temperature ranges from -55℃ to+ 150℃.Electrical characteristics:(1):gate threshold voltage is 4.5V min,5.5V typ and 6.5V max when VGE is VCE and IC is 8 mA;(2):collector-emitter saturation voltage is 2.5V typ and 3V max wh en VGE is 15 V, IC is 200 A and Tj is 25 °C;(3):zero gate voltage collector current is 3mA typ and 4mA max when VC E is 1200 V, VGE is 0 V and Tj is 25 °C;(4):gate-emitter leakage current is 200nA max when VGE is 20 V and VCE is 0 V.

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