 | Author | Message | | | jojolucky | | Posted: Mon Feb 22, 2010 8:31 am Post subject: AH-312 Datasheet | | | | Joined: 12 Apr 2008 Posts: 290 | Edited by seekic.com,the leading IC purchasers' best choice of platform for one-stop valued service!
Description:
The AH312 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowband- tuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a lead-free/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. The AH312 is targeted for use as a driver amplifier in wireless infrastructure where high linearity and medium power is required. An internal active bias allows the AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base stations.
The features of AH312 are 400 - 2300 MHz, +33 dBm P1dB, +51 dBm output IP3, 18 dB gain @ 900MHz, single positive supply (+5V), MTTF>100 years. And it can be final stage amplifiers for repeaters, mobile infrastructure. The maximum ratings of AH312 are operating case temperature -40℃ to 85℃, storage temperature -65℃ to 150℃, DC voltage +8V, continous RF input power +28dBm, junction temperature +250℃, device power 8W, device current 1400mA.(operation of this device above any of these parameters may cause permanent damage.) | |
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