 | Author | Message | | | jojolucky | | Posted: Tue Feb 02, 2010 7:54 am Post subject: 2SC5411 Datasheet | | | | Joined: 12 Apr 2008 Posts: 299 | Edited by seekic.com,the leading IC purchasers' best choice of platform for one-stop valued service!
Description:
2SC5411 is a kind of silicon NPN triple diffused MESA type. The typical applications include hotizontal deflection output for high resolution display, color TV and high speed switching. There are some features as follows. First is high voltage which is 1500 V (VCBO). The second is low saturation voltage which is 3 V max (VCE(sat)). Then is high speed which is 0.15μs (Typ.) (tf). At last, collector metal (Fin) is fully covered with mold resin.
What comes next is about the maximum ratings. The VCBO (collector-base voltage) is 1500 V. The VCEO (collector-emitter voltage) is 600 V. The VEBO (emitter-base voltage) is 5 V. The IC (DC current) is 15 A and the ICP (pulse collector current) is 28 A. The IB (base current) is 7 A. The PC (collector power consumption) is 60 W at TC=25℃. The Tj (junction temperature) is 150℃. The Tstg (storage temperature) is from -55 to 150℃.
The following is about the electrical characteristics (Ta=25℃). The maximum ICBO (collector cut-off current) is 1 mA. The maximum IEBO (emitter cut-off current) is 10 μA. The minimum V(BR)CEO (emitter-base breakdown voltage) is 600 V at IC=10 mA, IB=0. The minimum hFE (DC current gain) is 10 and the maximum is 40 at VCE=5 V, IC=2 A; The minimum hFE (DC current gain) is 4 and the maximum is 8 at VCE=5 V, IC=11 A. The maximum VCE(sat) (collector-emitter saturation voltage) is 3 V at IC=11 A, IB=2.75 A. The typical VBE(sat) (base-emitter saturation voltage) is 1.0 V and the maximum is 1.5 V at IC=11 A, IB=2.75 A. The typical fT (transition frequency) is 2 MHz at VCE=10 V, IC=0.1 A. | |
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