 | Author | Message | | | jojolucky | | Posted: Wed Jan 06, 2010 8:23 am Post subject: 1900-70M Datasheet | | | | Joined: 12 Apr 2008 Posts: 142 | Description:
1900-70M is a kind of NPN power switching transistor.The typical applications include inverters,switching regulators,motor controls and solenoid driver.Edited by http://www.seekic.com/icdata/1900-70M.html the leading IC purchasers' best choice of platform for one-stop valued service!
Here you can get some information about the features.First is NPN planar epitaxial power transistor.The second is about the contact metallization.The base and emitter is aluminum and the collector is alloy gold suitable for euectic mount.Then is complementary PNP:OTC1550 Type.The last one is about the dimensions.The die size is 0.136×0.136×0.010 inch;the emitter bond area (E) is 0.095×0.012 inch;the base bond area (B) is 0.110×0.007 inch.
What comes next is about the electrical characteristics at 25℃.The minimum BVCBO (collector emitter) is 100 Vdc at IC=100μA.The minimum BVCEO (collector emitter) is 70 Vdc at IC=30 mA.The maximum ICEX (collector emitter cutoff) is 1.0 mA at VCE=90 V,VBE=-0.5 V.The maximum ICEX (collector cutoff) is 1.0 mA at VCE=90 V,VBE=-0.5 V.The maximum ICEX (collector cutoff) is 10 mA at VCE=90 V,VBE=-0.5 V,Tj=150℃.The maximum IEBO (emitter cutoff) is 10μA at VEB=5 V.The minimum hFE (DC current gain) is 100 at IC=1 A,VCE=5 V.The minimum hFE (DC current gain) is 80 and the maximum is 170 at IC=5 A,VCE=5 V.The minimum hFE (DC current gain) is 15 at IC=10 A,VCE=5 V.The maximum VCE(sat) (collector saturation) is 0.3 Vdc at IC=3 A,IB=0.15 A.The maximum VBE(sat) (emitter base saturation) is 1.5 Vdc at IC=3 A,IB=0.15 A.The maximum Ton (td+tr) is 200 ns and the maximum Toff (ts+tf) is 900 ns at VC=30 V,IC=1 A,IB1=IB2=0.05 A.The maximum COB (output capacitance) is 300 pF at VCB=-10 V,f=1 MHz.The minimum ft (small signal current gain) is 10 at IC=500 mA,VCE=6 V,f=10 MHz. | |
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